When a 
junction diode is made from gallium arsenide, energy is released at the junction due to the recombination of electrons and holes. This energy is in
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A
If 
junction diode is made from germanium or silicon, the energy released due to recombination of free electrons and holes is in the infrared region. However if the 
junction diode is made from gallium arsenide or indium phosphide, then the energy released due to recombination of free electrons and holes is in the visible region.
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